2018 metai

  1. STANIONYTĖ, S., et al. Impact of thermal treatments on epitaxial Ga y In 1− y As 1− x Bi x layers luminescent properties. Journal of Materials Science, 2018, 53.11: 8339-8346.
  2. ALEKNAVIČIUS, J., et al. Influence of laser irradiation on optical properties of GaAsBi/GaAs quantum wells. Lithuanian Journal of Physics, 2018, 58.1.
  3. STANIONYTĖ, S., et al. Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions. Lithuanian Journal of Physics, 2018, 58.1.
  4. GEGEVIČIUS, Rokas, et al. Oxide Layer Enhances Photocurrent Gain of the Planar MAPbI3 Photodetector. Advanced Electronic Materials, 2018, 4.7: 1800114.
  5. TREIDERIS, Marius, et al. Minimization of Optical Reflectance by Copper Assisted Etching of Crystalline Silicon Surface. physica status solidi (a), 2018, 215.6: 1700600.

2017 metai

  1. BUTKUTĖ, Renata, et al. Bismuth quantum dots in annealed GaAsBi/AlAs quantum wells. Nanoscale research letters, 2017, 12.1: 436.
  2. BUTKUTĖ, R., et al. AlAs as a Bi blocking barrier in GaAsBi multi-quantum wells: structural analysis. Lithuanian Journal of Physics, 2017, 57.1.
  3. PAČEBUTAS, Vaidas, et al. Bismides: 2D structures and quantum dots. Journal of Physics D: Applied Physics, 2017, 50.36: 364002.