{"id":78,"date":"2016-04-15T17:59:02","date_gmt":"2016-04-15T17:59:02","guid":{"rendered":"http:\/\/pfi.ftmc.lt\/?page_id=78"},"modified":"2019-05-31T10:39:46","modified_gmt":"2019-05-31T10:39:46","slug":"publikacijos","status":"publish","type":"page","link":"https:\/\/pfi.ftmc.lt\/?page_id=78&lang=lt","title":{"rendered":"Publikacijos"},"content":{"rendered":"\n

2018 metai<\/h3>\n\n\n\n
  1. \n
    STANIONYT\u0116, S., et al. Impact of thermal treatments on epitaxial Ga y In 1\u2212 y As 1\u2212 x Bi x layers luminescent properties. Journal of Materials Science<\/i>, 2018, 53.11: 8339-8346.<\/div>\n<\/li>
  2. \n
    ALEKNAVI\u010cIUS, J., et al. Influence of laser irradiation on optical properties of GaAsBi\/GaAs quantum wells. Lithuanian Journal of Physics<\/i>, 2018, 58.1.<\/div>\n<\/li>
  3. \n
    STANIONYT\u0116, S., et al. Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions. Lithuanian Journal of Physics<\/i>, 2018, 58.1.<\/div>\n<\/li>
  4. \n
    GEGEVI\u010cIUS, Rokas, et al. Oxide Layer Enhances Photocurrent Gain of the Planar MAPbI3 Photodetector. Advanced Electronic Materials<\/i>, 2018, 4.7: 1800114.<\/div>\n<\/li>
  5. TREIDERIS, Marius, et al. Minimization of Optical Reflectance by Copper Assisted Etching of Crystalline Silicon Surface. physica status solidi (a)<\/i>, 2018, 215.6: 1700600.<\/li><\/ol>\n\n\n\n

    2017 metai<\/h3>\n\n\n\n
    1. \n
      BUTKUT\u0116, Renata, et al. Bismuth quantum dots in annealed GaAsBi\/AlAs quantum wells. Nanoscale research letters<\/i>, 2017, 12.1: 436.<\/div>\n<\/li>
    2. \n
      BUTKUT\u0116, R., et al. AlAs as a Bi blocking barrier in GaAsBi multi-quantum wells: structural analysis. Lithuanian Journal of Physics<\/i>, 2017, 57.1.<\/div>\n<\/li>
    3. \n
      PA\u010cEBUTAS, Vaidas, et al. Bismides: 2D structures and quantum dots. Journal of Physics D: Applied Physics<\/i>, 2017, 50.36: 364002.<\/div>\n<\/li><\/ol>\n","protected":false},"excerpt":{"rendered":"

      2018 metai STANIONYT\u0116, S., et al. Impact of thermal treatments on epitaxial Ga y In 1\u2212 y As 1\u2212 x Bi x layers luminescent properties. Journal of Materials Science, 2018, 53.11: 8339-8346. ALEKNAVI\u010cIUS, J., et al. Influence of laser irradiation on optical properties of GaAsBi\/GaAs quantum wells. Lithuanian Journal of Physics, 2018, 58.1. STANIONYT\u0116, S.,…<\/p>\n

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