{"id":861,"date":"2018-11-19T13:45:11","date_gmt":"2018-11-19T13:45:11","guid":{"rendered":"http:\/\/pfi.ftmc.lt\/?page_id=861"},"modified":"2019-05-31T10:43:47","modified_gmt":"2019-05-31T10:43:47","slug":"terminiu-procesu-krosnis-ir-pecvd-reaktorius-svcs","status":"publish","type":"page","link":"https:\/\/pfi.ftmc.lt\/?page_id=861&lang=lt","title":{"rendered":"Termini\u0173 proces\u0173 krosnis ir PECVD reaktorius SVCS"},"content":{"rendered":"\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">SVCS PECVD &#8211; tai pramonin\u0117 \u012franga, skirta oksid\u0173 auginimui \u2013 SiO<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">2<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\"> bei Si<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">3<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">N<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">4<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">, paprastai naudojam\u0173 saul\u0117s element\u0173 prototipavimeir gamyboje.\u012eranga turi 2 oksidavimo metodus \u2013 PECVD bei termin\u0119-oksidacin\u0119 krosnis.<\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">PECVD oksidais yra dengiami puslaidininkiniai bandiniai, siekiant elektri\u0161kai izoliuoti sluoksnius arba grandyno elementus. Plazminis aktyvavimas leid\u017eia suma\u017einti oksido formavimo proceso temperat\u016bras iki 350-400 \u00b0C, taip u\u017etikrinant ma\u017eesn\u012f termin\u012f poveik\u012f bandiniams. Taip pat galima auginti grafen\u0105, naudojant CH<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">4<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\"> dujas.<\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">Termin\u0117-oksidacin\u0117 krosnis leid\u017eia formuoti terminius, auk\u0161tos kokyb\u0117s SiO<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">2<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\"> oksid\u0105 ant kristalinio silicio plok\u0161teli\u0173. Oksidacijos procesas vyksta, tiekiant O2 arba dejonizuoto vandens garus tarp 950\u00b0C ir 1100\u00b0C. Proceso metu, Si pavir\u0161ius reaguoja su deguonies \u0161altiniu, ir formuoja kristali\u0161kai \u0161var\u0173 SiO2. Tipiniai augimo grei\u010diai yra 0.1nm\/min i\u0161 O<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">2<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\"> bei 1 nm\/min i\u0161 H<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">2<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">0. <\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">PECVD krosn\u012f sudaro kvarco vamzdis (\u00d820cm, 1.5m ilgio), vakuuminiai vandeniu au\u0161inami gaubtai, tikslaus duj\u0173 padavimo, paremta duj\u0173 srauto valdikliais (MFC), kompiuterin\u0117 valdymo sistema bei vakuumo pompa su davikliais. RF plazma generuojama lokaliai, sukuriant potencial\u0105 tarp grafitinio laikikli\u0173 plok\u0161tum\u0173. Plazmos da\u017enis yra 450 kHz, kontroliuojama \u0161altinio galia bei apkrovimo laikas (\u201edutycycle\u201c) nuo 1ms iki 10s. Pasiekiamas vakuumo lygis iki 30mTorr (40mBar). Vakuumas duj\u0173 sraute yra kontroliuojamas 400-1800 mTorr ribose. Aktyvi zona, kurioje palaikoma temperat\u016bra yra 30cm ilgio, temperat\u016bros stabilum\u0105 iki 0.1\u00b0C u\u017etikrina 3 temperat\u016bros zon\u0173 valdymas. Reakcijoje nesunaudotos dujos yra sudeginamos tam skirtame duj\u0173 neutralizavimo \u012frenginyje.<\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">Bandini\u0173 laikikliai: 1x1cm, 2\u201c bei 4\u201c substratams. Galima krauti iki 50vnt 4\u201c plok\u0161teli\u0173.<\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">Turimos dujos : SiH4, N2O, CH4, NH3, Ar\/H2, N2.<\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">Termin\u0119-oksidacin\u0119 krosn\u012f sudaro kvarco vamzdis (\u00d820cm, 1.5m ilgio) su atviru galu, tikslaus duj\u0173 padavimo, paremta duj\u0173 srauto valdikliais (MFC) bei kompiuterin\u0117 valdymo sistema. \u0160i krosnis veikia atmosferiniame sl\u0117gyje. Turime kvarcinius laikiklius tiek kvadratin\u0117ms, tiek apvalioms Si plok\u0161tel\u0117ms. Maksimali temperat\u016bra yra 1200\u00b0C.<\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">Bandini\u0173 laikikliai: 1x1cm, 2\u201c bei 4\u201c substratams. Galima krauti iki 50vnt 4\u201c plok\u0161teli\u0173.<\/span><\/span><\/span><\/p>\n\n\n\n<p><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">Turimos dujos : O2, N2. H<\/span><\/span><\/span><span style=\"color: #000000;\"><sub><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">2<\/span><\/span><\/sub><\/span><span style=\"color: #000000;\"><span style=\"font-family: Cambria, serif;\"><span style=\"font-size: small;\">0 garai generuojami i\u0161 ultragarsinio kaitinimo \u012frenginio. <\/span><\/span><\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>SVCS PECVD &#8211; tai pramonin\u0117 \u012franga, skirta oksid\u0173 auginimui \u2013 SiO2 bei Si3N4, paprastai naudojam\u0173 saul\u0117s element\u0173 prototipavimeir gamyboje.\u012eranga turi 2 oksidavimo metodus \u2013 PECVD bei termin\u0119-oksidacin\u0119 krosnis. PECVD oksidais yra dengiami puslaidininkiniai bandiniai, siekiant elektri\u0161kai izoliuoti sluoksnius arba grandyno elementus. Plazminis aktyvavimas leid\u017eia suma\u017einti oksido formavimo proceso temperat\u016bras iki 350-400 \u00b0C, taip u\u017etikrinant ma\u017eesn\u012f&hellip;<\/p>\n<p class=\"more-link-wrapper\"><a class=\"more-link\" href=\"https:\/\/pfi.ftmc.lt\/?page_id=861&#038;lang=lt\">Continue<\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"parent":161,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-templates\/template-fullwidth.php","meta":{"footnotes":""},"class_list":["post-861","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=\/wp\/v2\/pages\/861","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=861"}],"version-history":[{"count":2,"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=\/wp\/v2\/pages\/861\/revisions"}],"predecessor-version":[{"id":1102,"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=\/wp\/v2\/pages\/861\/revisions\/1102"}],"up":[{"embeddable":true,"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=\/wp\/v2\/pages\/161"}],"wp:attachment":[{"href":"https:\/\/pfi.ftmc.lt\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=861"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}